PART |
Description |
Maker |
TC58NYG0S3HBAI4 |
SLC NAND
|
TOSHIBA
|
TC58NVG2S0FTA00 |
SLC NAND
|
TOSHIBA
|
TC58NVG2S0HTAI0 |
SLC NAND
|
TOSHIBA
|
TH58NVG5S0FTAK0 |
SLC NAND
|
TOSHIBA
|
TC58NVG1S3HTA00 |
SLC NAND
|
TOSHIBA
|
S34ML02G1 S34ML02G100BFI000 S34ML02G100BFI003 S34M |
Spansion? SLC NAND Flash Memory for Embedded
|
SPANSION
|
TC58NVG0S3HBAI4 TC58NVG1S3HTA00 TC58NVG0S3HBAI6 TC |
NAND Flash Memory(SLC Middle Capacity) NAND Flash Memory(SLC Middle Capacity)
|
Toshiba Semiconductor
|
ST6294M8 |
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
|
|
M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681 Triple 3-input NAND Gate 3输入与非 Quad 2-input NAND Gate 输入与非 Single 8-input NAND Gate 输入与非 Dual 4-input NAND Gate 输入与非 Triple 3-input NAND Gate 输入与非 Dual 4-input NAND Gate 4输入与非
|
ITT, Corp. Astrodyne, Inc. Ecliptek, Corp. Electronic Theatre Controls, Inc. Bourns, Inc. Newhaven Display International, Inc. Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd.
|
M38510/30009B2A M38510/30009BAA M38510/30009BAB M3 |
Single 8-input NAND Gate Dual 4-input NAND Gate Quad 2-input NAND Gate Triple 3-input NAND Gate 3输入与非 Triple 3-input NAND Gate 输入与非
|
ITT, Corp. Linear Technology, Corp. Bel Fuse, Inc.
|
IW4011B |
NAND gates provide the system designer with direct implementation of the NAND function
|
Estek Electronics Co. Ltd
|
74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp. NXP SEMICONDUCTORS
|